Fernando Bernabé Naranjo Vega-rekin lankidetzan egindako argitalpenak (8)

2022

  1. Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

    Materials, Vol. 15, Núm. 20

2020

  1. AlxIn1-xN on Si (100) Solar Cells (x = 0-0.56) deposited by RF sputtering

    Materials, Vol. 13, Núm. 10

  2. Design of AlInN on silicon heterojunctions grown by sputtering for solar devices

    Current Applied Physics, Vol. 20, Núm. 11, pp. 1244-1252

  3. Low-to-Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio-Frequency Sputtering

    Physica Status Solidi (B) Basic Research, Vol. 257, Núm. 4

2019

  1. High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

    Materials Science in Semiconductor Processing, Vol. 100, pp. 8-14

  2. Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering

    Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1

2018

  1. Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

    AIP Advances, Vol. 8, Núm. 11

  2. Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

    Journal of Alloys and Compounds, Vol. 769, pp. 824-830