Javier Olea Ariza-rekin lankidetzan egindako argitalpenak (5)

2020

  1. AlxIn1-xN on Si (100) Solar Cells (x = 0-0.56) deposited by RF sputtering

    Materials, Vol. 13, Núm. 10

  2. Low-to-Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio-Frequency Sputtering

    Physica Status Solidi (B) Basic Research, Vol. 257, Núm. 4

2019

  1. High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

    Materials Science in Semiconductor Processing, Vol. 100, pp. 8-14

  2. Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering

    Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1

2018

  1. Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

    AIP Advances, Vol. 8, Núm. 11