Ciencia y aeroespacial
DEPARTAMENTO
Grenoble Alpes University
Saint-Martin-d’Hères, FranciaPublicaciones en colaboración con investigadores/as de Grenoble Alpes University (6)
2019
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Electrical and optical properties of heavily Ge-doped AlGaN
Journal of Physics D: Applied Physics, Vol. 52, Núm. 12
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Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering
Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1
2018
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Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
AIP Advances, Vol. 8, Núm. 11
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Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths
Nanotechnology, Vol. 29, Núm. 38
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Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
Journal of Alloys and Compounds, Vol. 769, pp. 824-830
2014
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Planck 2013 results. I. Overview of products and scientific results
Astronomy and Astrophysics, Vol. 571