Influence of size factors in the electroluminescent emission of large area GaAs IREDs
- Reyna, R.F. 1
- Araujo, G.L. 1
- Maroto, J.C. 1
- Algora, C. 1
- Marti, A. 1
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1
Universidad Politécnica de Madrid
info
ISSN: 0018-9383
Año de publicación: 1997
Volumen: 44
Número: 7
Páginas: 1174-1176
Tipo: Artículo
Otras publicaciones en: IEEE Transactions on Electron Devices
Resumen
A model to explain the current dependence of the external quantum efficiency of GaAs LEDs is presented. First, this efficiency increases with the current due to the relative increase of the diffusion current in the total current; then, it remains constant since the diffusion current becomes dominant and finally, decreases due to series resistance effects, in the absence of thermal effects.
Referencias bibliográficas
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