Influence of size factors in the electroluminescent emission of large area GaAs IREDs

  1. Reyna, R.F. 1
  2. Araujo, G.L. 1
  3. Maroto, J.C. 1
  4. Algora, C. 1
  5. Marti, A. 1
  1. 1 Universidad Politécnica de Madrid
    info

    Universidad Politécnica de Madrid

    Madrid, España

    ROR https://ror.org/03n6nwv02

Revista:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Ano de publicación: 1997

Volume: 44

Número: 7

Páxinas: 1174-1176

Tipo: Artigo

DOI: 10.1109/16.595948 GOOGLE SCHOLAR lock_openAcceso aberto editor

Outras publicacións en: IEEE Transactions on Electron Devices

Obxectivos de Desenvolvemento Sustentable

Resumo

A model to explain the current dependence of the external quantum efficiency of GaAs LEDs is presented. First, this efficiency increases with the current due to the relative increase of the diffusion current in the total current; then, it remains constant since the diffusion current becomes dominant and finally, decreases due to series resistance effects, in the absence of thermal effects.

Referencias bibliográficas

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