High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering
- Núñez-Cascajero, A.
- Blasco, R.
- Valdueza-Felip, S.
- Montero, D.
- Olea, J.
- Naranjo, F.B.
Aldizkaria:
Materials Science in Semiconductor Processing
ISSN: 1369-8001
Argitalpen urtea: 2019
Alea: 100
Orrialdeak: 8-14
Mota: Artikulua